AM30040031SF-3H

时间：2019-09-11作者：深圳市国宇航芯科技有限公司浏览：179

深圳市国宇航芯科技有限公司专注于编程FPGA器件等

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• T1G4020036-FS

  Qorvo's T1G4020036-FS is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The device is constructed with Qorvo's proven T

• TGA2595功率放大器的详细资料

  产品型号:  TGA2595产品名称：功率放大器TGA2595产品特征POUT：39 dBm的（PIN = 18 dBm的）PAE：> 22％（PIN = 18 dBm）功率增益：21 dB（PIN = 18 dBm）IM3在30 dBm /音= -27 dBcIM5，30 dBm /音调= -46 dBc偏压：VD = 20 V，IDQ = 560 mA，VG = -2

• 绵阳 HMC311SC70的详细信息

  The HMC311SC70 from Analog Devices is a RF Amplifier with Frequency DC to 8 GHz, Gain 15 dB, Noise Figure 5 dB, P1dB 15.5 dBm, P1dB 0.035 W. Tags: Surface Mount, Gain Block, Driver Amplifier, Power Am

• 绵阳QPD1022的详细信息

  QPD1022DC - 12 GHz, 10 Watt, 32 V GaN RF TransistorKey FeaturesFrequency Range: DC - 12 GHzOutput Power (P3dB): 11.0 W at 2 GHzLinear Gain: 24.0 dB typical at 2 GHzTypical PAE3dB: 68.8 % at 2 GHzOpera