绵阳QPD1022的详细信息

时间：2020-01-05作者：深圳市国宇航芯科技有限公司浏览：37

QPD1022

DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor

Key Features

Frequency Range: DC - 12 GHz

Output Power (P3dB): 11.0 W at 2 GHz

Linear Gain: 24.0 dB typical at 2 GHz

Typical PAE3dB: 68.8 % at 2 GHz

Operating voltage: 32V

Low thermal resistance package

CW and Pulse capable

3 x 3 mm package

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant.  Evaluation boards are available upon request.


深圳市国宇航芯科技有限公司专注于编程FPGA器件等

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