1. Async Fast SRAM Density Org. Part Number Vdd(V) Access Time Package Availability 1M bit 64Kx16 S6R1016W1A 1.65~3.6 8/10/12/15ns 44TSOP2 Now S6R1016V1A 3.3 8/10ns 48FBGA Now S6R1016C1A 5 10ns Now 128Kx8 S6R1008W1A 1.65~3.6 8/10/12/15ns 32sTSOP1 Now S6R1008V1A 3.3 8/10ns 36FBGA Now S6R1008C1A 5 10ns Now 2M bit 128Kx16 S6R2016W1A 1.65~3.6 8/10/12/15ns 44TSOP2 Now S6R2016V1A 3.3 8/10ns 48FBGA Now S6R2016C1A 5 10ns Now 256Kx8 S6R2008W1A 1.65~3.6 8/10/12/15ns 44TSOP2 Now S6R2008V1A 3.3 8/10ns 36FBGA Now S6R2008C1A 5 10ns Now 4M bit 256Kx16 S6R4016W1A 1.65~3.6 8/10/12/15ns 44TSOP2 Now S6R4016V1A 3.3 8/10ns 48FBGA Now S6R4016C1A 5 10ns Now 512Kx8 S6R4008W1A 1.65~3.6 8/10/12/15ns 44TSOP2 Now S6R4008V1A 3.3 8/10ns 36FBGA Now S6R4008C1A 5 10ns Now 8M bit 512Kx16 S6R8016W1A 1.65~3.6 8/10/12/15ns 44TSOP2 Now S6R8016C1A 5 10ns 48FBGA Now 1Mx8 S6R8008W1A 1.65~3.6 8/10/12/15ns 44TSOP2 Now S6R8008C1A 5 10ns 48FBGA Now 16M bit 1Mx16 S6R1616W1M 1.65~3.6 8/10/12/15ns 48TSOP1 Now S6R1616V1M 3.3 8/10ns 48FBGA Now S6R1616C1M 5 10ns Now 2Mx8 S6R1608W1M 1.65~3.6 8/10/12/15ns 44TSOP2 Now S6R1608V1M 3.3 8/10ns 48FBGA Now S6R1608C1M 5 10ns Now 32M bit 2Mx16 S6R3216W1M 1.65~3.6 8/10/12/15ns 48FBGA Now 4Mx8 S6R3208W1M 1.65~3.6 8/10/12/15ns Now 2. ASYNC Low Power SRAM Density Org. Part Number Vdd(V) C/S Speed -tAA(ns) Package Availability Option 1M bit 64Kx16 S6L1016W1M 2.3~3.6 1 C/S 45/55/70ns 44TSOP2, 48FBGA Now S6L1016C1M 4.5~5.5 1 C/S 44TSOP2, 48FBGA Now 128Kx8 S6L1008W2M 2.3~3.6 2 C/S 45/55/70ns 32sTSOP1, 2TSOP1, 32SOP Now S6L1008C2M 4.5~5.5 2 C/S Now 2M bit 128Kx16 S6L2016W1M 2.3~3.6 1 C/S 45/55/70ns 44TSOP2,48FBGA Now S6L2016W2M 2.3~3.6 2 C/S 48FBGA Now S6L2016C1M 4.5~5.5 1 C/S 44TSOP2 Now 256Kx8 S6L2008W1M 2.3~3.6 1 C/S 45/55/70ns 36FBGA Now S6L2008W2M 2.3~3.6 2 C/S 32sTSOP1, 32TSOP1, 32TSOP2, 32SOP Now S6L2008C2M 4.5~5.5 2 C/S Now 4M bit 256Kx16 S6L4016W1M 2.3~3.6 1 C/S 45/55/70ns 44TSOP2, 48FBGA Now S6L4016W2M 2.3~3.6 2 C/S 44TSOP2, 48FBGA Now S6L4016C1M 4.5~5.5 1 C/S 44TSOP2 Now S6L4016C2M 4.5~5.5 2 C/S 44TSOP2 Now 512Kx8 S6L4008W1M 2.3~3.6 1 C/S 45/55/70ns 32sTSOP1, 32TSOP1, 32TSOP2, 32SOP Now S6L4008C1M 4.5~5.5 1 C/S Now 8M bit 512Kx16 S6L8016W1M 2.3~3.6 1 C/S 45/55/70ns 44TSOP2, 48FBGA Now S6L8016W2M 2.3~3.6 2 C/S 44TSOP2, 48FBGA Now S6L8016C1M 4.5~5.5 1 C/S 44TSOP2, 48FBGA Now S6L8016C2M 4.5~5.5 2 C/S 48FBGA Now 1Mx8 S6L8008W2M 2.3~3.6 2 C/S 45/55/70ns 44TSOP2, 48FBGA Now S6L8008C2M 4.5~5.5 2 C/S 44TSOP2, 48FBGA Now
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1. Async Fast SRAM Density Org. Part Number Vdd(V) Access Time Package Availability 1M bit 64Kx16 S6R1016W1A 1.65~3.6 8/10/12/15ns 44TSOP2 Now S6R1016V1A 3.3 8/10ns 48FBGA Now S6R1016C1A 5 10ns Now 12
加密芯片介绍 会内置先进的加密化功能的AES256,提供2K Bytes的EEPROM用户区域的高性能保安存储装置. EEPROM分为8个用户区域, 此8个用户EEPROM区域里保存单/双数的数据时, 个个区域可以应用不同的加密功能。组成区域里为了用户读写EEPROM区域密码和已包含使用在 加密IC的AES256秘密KEY. 通过动态,对称,相互认证,数据加密解密,提供把使
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